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2SA1162 GR X FT 23
Transistor 2SA1162 Audio Frequency General Purpose Amplifier Applications original yaesu n.p g3111627g
Prezzo € 2,00
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2SA1213Y X FT 5100
PNP Silicon Epitaxial Transistors 2SA1213 Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A)PC=1.0 to 2.0W(mounted on ceramic substrate) original yaesu n.p g3112137y
Prezzo € 4,00
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2SA1586Y X FT 23
Transistor Polarity PNP Collector-Emitter Voltage 50 V Frequency 80 MHz Collector Current (DC)150 mA original yaesu n.p g3115867y
Prezzo € 2,00
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2SA1870 N P G 3118708E
2SA1870 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING original yaesu n.p g3118708e
Prezzo € 8,00
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2SB1301 -T2
Struttura: PNP Potenza massima dissipabile (Pc): 0.75 Tensione tra collettore e base (Ucb): 20 Massima corrente continuativa (Ic): 3 guadagno di tensione in continua (hfe): 120 original part yaesu g3213017q
Prezzo € 8,00
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